Dielectric Deposition

Dielectric Deposition

Dielectric Film Deposition (PECVD, RPCVD)


Thin dielectric films are deposited using plasma enhanced chemical vapor deposition (PECVD) or remote plasma chemical vapor deposition (RPCVD) of SiO2, Si3N4 or a-Si. The source gases for the PECVD SiO2 films are 5% SiH4 in N2 plus N2O; for SixNy films source gases include  5% SiH4 in N2 plus NH3 and N2. General recipes are listed in Table A; additional recipes are available to control film stress or optical parameters or to deposit amorphous Si. The PlasmaQuest RPCDV system uses SiH4 in He plus N2O for SiO2 films and SiH4 plus NH3 for nitride films. Dielectric films can also be deposited using sputtering, reactive RF sputtering, e-beam evaporation (see metal deposition section).


Links to operating manuals Films Gases Thickness range Material Limitations Calendar links
Oxford PECVD SiO2, SixNy, amorphous Si 5% SiH4 in N2, N2O, NH3, N2,CH4 No Au PECVD
Plasma Quest RPCVD SiO2, SixNy 5%SiH4 in He, N2O, He, NH3 No restrictions  PlasmaQuest

Tool Table


Film Rate nm/min Pressure (mT) T (C) Power (W) Pulse % LF/HF 5% SiH4 (sccm) NH3 (sccm) N2O (sccm) N2 (sccm)
SiO2 80 1000 350 20 0/100 170 0 710 0
SixNy 13.2 650 350 20 30/70 440 20 0 650
a-Si 30 1000 350 10 0/100 500 0 0 0
Low stress SiN

PECVD Standard Recipes

Notes about Chamber cleaning with CF4 or SF6 or ….




Gases Temperature Nominal rates Material limits Small Samples
SiO2 SiH4/Ar, N2O 100-300? None Carrier needed
SixN4 SiH4/Ar, NH3 None Carrier needed

Plasma Quest standard recipes;


PlasmaTherm standard recipes (tbd)


Posted on

February 17, 2015