Metal Film Deposition (E-beam evaporation, thermal evaporation, sputtering)
Thin metal films can be deposited using thermal evaporation, e-beam evaporation, or sputtering. Thermal evaporation uses a hot filament or boat to evaporate materials such as Cr, Ge, Au, Ni or AuGe. E-beam evaporation allows the evaporation of a wider range of metals with higher melting points. Physical sputtering uses ionized gases (Ar) to move material from the target to the substrate. Dielectric films (SiO2, Si3N4, Al2O3) can be produced from dielectric targets and RF power or else reactively sputtered in mixtures of Ar and O2. In addition, other compounds such as TiN or TaN can be produced using Ar-N2 mixtures and the metal target. Sputtering provides good step coverage over topographical features in the substrate. In addition, pre-clean sputter etching is available to ensure good contacts. Step coverage. Metal etch (links to Cloey etc. needed? ) Recommend e-beam or evaporation for lift-off metals. Multi-layer metal stacks use 4 hearth evaporation or sputtering
|Tool||Technique||Target/source||Size||T sub||Gases||Not allowed||Calendar|
|Lesker#1 SOP Rev C||Sputter down||2 DC guns;1 RF gun||3” Diameter targets; 4” holder||<=350C||Ar,N2 or O2||Cu, Au, Ag||Lesker reservation|
|Lesker #2 Magnetron ZnO2 Sputtering||Sputter up||1 7” gun||Ar, O2||Lesker 2|
|Lesker #3 E-beam evaporation||E-Beam||4-pocket hearth||12” sample holder||<= 350C||Vacuum||No Cu, Au, Ag||Lesker 3|
|Lesker #4 E-beam evaporation||E-beam||4-pocket hearth||12” sample holder||<=450||Vacuum||No Cu, Au, Ag||Lesker 4|
|CHA E-beam evaporator||E-beam||4-pocket hearth; Al, AlSi, Ti, SiO2||Planetary;18 4” wafers||RT substrate||Vacuum||CHA E-beam|
|Edwards #2 Thermal evaporator||Thermal||4 sources||8” sample holder||Vacuum||Edwards #2|
Metal Deposition Tool table (1st column link to operating manuals); Allowed materials list is in the operating manual?
Details (allowed materials here? or in operating manuals?).